FQPF7P20 The FQPF7P20 is a P-Channel enhancement-mode MOSFET rated at 200V drain-source voltage and 5.2A continuous drain current.
Mfr Part #:

FQPF7P20

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQPF7P20 is a P-Channel enhancement-mode MOSFET rated at 200V drain-source voltage and 5.2A continuous drain current.
✓ Total Stock: 23,900 pcs
$ Price Range: $1.01 - $2.84

FQPF7P20 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,900 pcs
23900 pcs On Request 1 On Request On Request 1133+ On Request On Request

FQPF7P20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF7P20 Description

Short technical summary and product information.

The FQPF7P20 from On Semiconductor is a P-Channel MOSFET designed for medium-power switching applications. It features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.2A at case temperature (Tc). The device exhibits a maximum on-resistance (Rds(on)) of 690mOhm at a gate drive of 10V and 2.6A drain current.

 

Built with MOSFET (Metal Oxide) technology, this transistor offers a maximum gate threshold voltage (Vgs(th)) of 5V at 250µA and supports a maximum gate-source voltage of ±30V. For high-frequency switching, the typical gate charge (Qg) is 25nC at Vgs=10V, and the input capacitance (Ciss) is 770pF at Vds=25V.

 

The device is housed in a TO-220-3 Full Pack (TO-220F-3) package with through-hole mounting, suitable for designs requiring isolated heatsinking. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 45W at case temperature.

FQPF7P20 Quick Information

Product Type: MOSFET
Canonical Name: FQPF7P20
Subcategory: Single MOSFET

FQPF7P20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF7P20 Estimated Pricing

Qty Low High
1+ $2.84 $2.84
10+ $1.83 $1.83
50+ $1.40 $1.40
100+ $1.26 $1.26
500+ $1.01 $1.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF7P20 Features

  • P-Channel MOSFET rated 200V drain-source.
  • Continuous drain current of 5.2A at Tc.
  • Maximum on-resistance 690mOhm at 10V.
  • Gate charge 25nC for switching efficiency.
  • Through-hole TO-220-3 Full Pack package.

FQPF7P20 Applications

  • Used in power management and load switching.
  • Suitable for battery protection circuits.
  • Ideal for DC-DC converter designs.
  • Works in motor control and solenoid drivers.

FQPF7P20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQPF7P20?

200V.

What is the maximum continuous drain current?

5.2A at case temperature.

What package is the FQPF7P20 available in?

TO-220-3 Full Pack (through-hole), supplier device package TO-220F-3.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQPF7P20 RoHS compliant?

The part is marked RoHS3 Compliant in the database (unverified).

What is the maximum Rds(on) at Vgs=10V?

690mOhm at 2.6A drain current.

What is the maximum gate threshold voltage?

5V at 250µA drain current.

Home
Account

Categories