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FQPF7N80C N-Channel MOSFET rated for 800V drain-source voltage and 6.6A continuous drain current. Features a maximum on-resistance of 1.9 Ohm and is housed in a TO-220F-3 full pack through-hole package.
Mfr Part #:

FQPF7N80C

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 6.6A continuous drain current. Features a maximum on-resistance of 1.9 Ohm and is housed in a TO-220F-3 full pack through-hole package.
✓ Total Stock: 26,589 pcs
$ Price Range: $1.45

FQPF7N80C Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
14,000 pcs
On Request
14000 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,389 pcs
On Request
1389 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,200 pcs
On Request
1200 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQPF7N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF7N80C Description

Short technical summary and product information.

The FQPF7N80C is an N-Channel enhancement-mode MOSFET from On Semiconductor, built with MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications, offering a drain-to-source voltage (Vdss) of 800V and a continuous drain current of 6.6A at case temperature (Tc). The device features a maximum drain-source on-resistance (Rds(on)) of 1.9 Ohm at a gate drive voltage of 10V and a drain current of 3.3A.

 

Key electrical characteristics include a maximum gate charge (Qg) of 35 nC at Vgs=10V and a maximum input capacitance (Ciss) of 1680 pF at Vds=25V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at Id=250µA, and the maximum gate-source voltage rating is ±30V. The device can dissipate up to 56W of power at case temperature.

 

The FQPF7N80C is supplied in a TO-220-3 Full Pack package, also known as the supplier device package TO-220F-3, and is designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, making it suitable for a variety of industrial and power conversion environments.

FQPF7N80C Quick Information

Product Type: MOSFET
Canonical Name: FQPF7N80C N-Channel MOSFET
Subcategory: Single N-Channel

FQPF7N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF7N80C Estimated Pricing

Qty Low High
207+ $1.45 $1.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF7N80C Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current rating of 6.6A.
  • Maximum on-resistance of 1.9 Ohm at 10V drive.
  • Through-hole TO-220F-3 full pack package.
  • Operating junction temperature range -55°C to 150°C.

FQPF7N80C Applications

  • Suitable for high-voltage power switching circuits.
  • Used in AC-DC converters and power supplies.
  • Ideal for motor control and inverter applications.
  • Applicable in lighting and industrial systems.

FQPF7N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FQPF7N80C?

The FQPF7N80C is housed in a TO-220-3 Full Pack package, also known as the supplier device package TO-220F-3, and is designed for through-hole mounting.

What is the operating temperature range of the FQPF7N80C?

The operating junction temperature range is -55°C to 150°C.

What is the maximum drain-source voltage for the FQPF7N80C?

The maximum drain-to-source voltage (Vdss) is 800V.

What is the maximum continuous drain current for the FQPF7N80C?

The maximum continuous drain current at case temperature (Tc) is 6.6A.

What is the maximum on-resistance of the FQPF7N80C?

The maximum drain-source on-resistance (Rds(on)) is 1.9 Ohm at a gate drive voltage of 10V and a drain current of 3.3A.

What is the gate threshold voltage of the FQPF7N80C?

The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250µA.

What is the maximum power dissipation of the FQPF7N80C?

The maximum power dissipation at case temperature (Tc) is 56W.

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