| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,651 pcs
|
52651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF7N65CYDTU is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage rating of 650V and a continuous drain current of 7A at case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a maximum on-resistance of 1.4 Ohms at 3.5A and 10V gate drive. Gate charge is 36 nC at 10V, and input capacitance is 1245 pF at 25V drain-source. The maximum power dissipation is 52W at case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a TO-220-3 Full Pack with formed leads, also known as TO-220F-3 (Y-Forming), and is designed for through-hole mounting. This component is suitable for various power switching applications requiring high voltage capability.
| Qty | Low | High |
|---|---|---|
| 1,600+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
7A at case temperature.
1.4 Ohms at 3.5A and 10V gate drive.
TO-220-3 Full Pack, Formed Leads (TO-220F-3).
-55°C to 150°C junction.
RoHS3 compliant (unverified).
36 nC at 10V.