| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,878 pcs
|
3878 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,177 pcs
|
1177 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
132 pcs
|
132 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF7N65C is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 7A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 3.5A and 10V gate drive, a typical gate charge of 36nC, and an input capacitance of 1245pF. The device can dissipate up to 52W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-220F full-pack through-hole package, providing isolation and ease of mounting. It is suitable for power supply, inverter, and motor control circuits where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
7A at 25°C case temperature.
TO-220-3 Full Pack (TO-220F).
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
1.4 Ohms at 3.5A and 10V gate drive.
Maximum 4V at 250µA drain current.