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FQPF7N60 N-Channel MOSFET with 600V drain-source voltage and 4.3A continuous drain current. Packaged in TO-220F through-hole package.
Mfr Part #:

FQPF7N60

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 4.3A continuous drain current. Packaged in TO-220F through-hole package.
✓ Total Stock: 400 pcs

FQPF7N60 Available from 1 distributor

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✓ Non-Authorised
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400 pcs
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FQPF7N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF7N60 Description

Short technical summary and product information.

The FQPF7N60 is an N-Channel enhancement-mode MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and a continuous drain current rating of 4.3A at 25°C case temperature. The maximum on-resistance is 1 Ohm at 2.2A drain current and 10V gate drive, ensuring low conduction losses. The gate threshold voltage is 5V maximum, and the device requires a 10V gate drive for optimal performance. Gate charge is 38 nC at 10V, and input capacitance is 1430 pF at 25V, enabling efficient switching in power conversion circuits. The maximum power dissipation is 48W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The device is housed in a through-hole TO-220-3 Full Pack package (TO-220F-3), which provides electrical isolation between the mounting tab and the die, simplifying heatsinking in designs. This MOSFET is suitable for use in switch-mode power supplies, inverters, and other high-voltage DC-DC converters.

FQPF7N60 Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 600V Drain-Source Voltage, 4.3A Continuous Drain Current, TO-220-3 Full Pack
Subcategory: N-Channel MOSFET

FQPF7N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF7N60 Features

  • N-Channel MOSFET with 600V breakdown voltage.
  • 4.3A continuous drain current rating.
  • Low 1 Ohm maximum on-resistance.
  • 38 nC gate charge for fast switching.
  • TO-220F through-hole package for easy mounting.

FQPF7N60 Applications

  • Suitable for high-voltage switching power supplies.
  • Ideal for inverter and converter circuits.
  • Used in AC-DC and DC-DC converters.
  • Applicable for motor control circuits.
  • Can be used in lighting ballasts.

FQPF7N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V.

What is the continuous drain current?

4.3A at 25°C case temperature.

What is the maximum on-resistance?

1 Ohm at 2.2A drain current and 10V gate drive.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

TO-220-3 Full Pack (also known as TO-220F-3).

Is this device RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

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