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FQPF6N90C FQPF6N90C is an N-Channel MOSFET from On Semiconductor with 900V maximum drain-source voltage and 6A continuous drain current.
Mfr Part #:

FQPF6N90C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF6N90C is an N-Channel MOSFET from On Semiconductor with 900V maximum drain-source voltage and 6A continuous drain current.
✓ Total Stock: 11,804 pcs

FQPF6N90C Available from 2 distributors

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Flip Electronics ✓
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10,000 pcs
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10000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,804 pcs
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1804 pcs On Request 1 On Request On Request On Request On Request On Request
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FQPF6N90C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF6N90C Description

Short technical summary and product information.

The FQPF6N90C is an N-Channel MOSFET from On Semiconductor featuring a maximum drain-source voltage of 900V and a continuous drain current rating of 6A at case temperature Tc. This device utilizes MOSFET technology with a maximum drain-source on-resistance of 2.3 Ohm at 3A drain current and 10V gate drive.

 

Key electrical characteristics include an input capacitance of 1770 pF at 25V drain-to-source, a typical gate charge of 40 nC at 10V Vgs, and a maximum gate threshold voltage of 5V at 250 µA. The device supports a maximum gate-source voltage of ±30V.

 

Packaged in a TO-220-3 Full Pack with through-hole mounting, the FQPF6N90C offers a maximum power dissipation of 56W at case temperature and an operating junction temperature range from -55°C to 150°C.

FQPF6N90C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQPF6N90C N-Channel MOSFET 900V 6A
Subcategory: Single N-Channel

FQPF6N90C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF6N90C Features

  • 900V maximum drain-source voltage rating.
  • 6A continuous drain current at case temp.
  • 2.3 Ohm maximum on-resistance at 10V drive.
  • Through-hole TO-220F-3 full pack package.
  • -55°C to 150°C operating junction temperature.

FQPF6N90C Applications

  • High voltage DC-DC converter circuits.
  • Power factor correction power supplies.
  • AC motor drive inverter stages.
  • Switching power supply primary side.
  • Electronic ballast and lamp drivers.

FQPF6N90C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of FQPF6N90C?

The maximum drain-source voltage (Vdss) is 900V.

What is the continuous drain current rating?

The maximum continuous drain current is 6A at Tc (case temperature).

What is the package type?

The package is TO-220-3 Full Pack with a TO-220F-3 supplier device package. Mounting is through hole.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C (TJ).

What is the on-resistance of FQPF6N90C?

The maximum drain-source on-resistance (Rds on) is 2.3 Ohm at Id=3A and Vgs=10V.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 5V at Id = 250 µA.

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