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FQPF6N80T N-Channel MOSFET rated for 800V drain-source voltage and 3.3A continuous drain current. Housed in a TO-220F through-hole package.
Mfr Part #:

FQPF6N80T

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 3.3A continuous drain current. Housed in a TO-220F through-hole package.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.11

FQPF6N80T Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQPF6N80T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF6N80T Description

Short technical summary and product information.

The FQPF6N80T is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 800V and a continuous drain current of 3.3A at case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a maximum on-resistance of 1.95 Ohms at 1.65A and 10V gate drive.

 

With a maximum gate charge of 31 nC at 10V and input capacitance of 1500 pF at 25V, this MOSFET is suitable for efficient switching in power supplies and converters. The operating junction temperature range is -55°C to 150°C, and maximum power dissipation is 51W at case temperature.

 

The device is offered in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing robust thermal performance and ease of mounting on heatsinks. It is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

FQPF6N80T Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQPF6N80T N-Channel MOSFET 800V 3.3A TO-220F
Subcategory: N-Channel MOSFET

FQPF6N80T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF6N80T Estimated Pricing

Qty Low High
1,000+ $1.11 $1.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF6N80T Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current rating of 3.3A.
  • Low on-resistance of 1.95 Ohms maximum.
  • TO-220F through-hole package for easy mounting.
  • Wide operating temperature range -55°C to 150°C.

FQPF6N80T Applications

  • High-voltage power supply switching circuits.
  • DC-DC converter and inverter applications.
  • Motor control and lighting ballasts.
  • Switch mode power supplies (SMPS).

FQPF6N80T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF6N80T?

800V.

What is the package type of the FQPF6N80T?

TO-220-3 Full Pack (TO-220F-3) through-hole.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQPF6N80T RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum drain current?

3.3A continuous at case temperature.

What is the maximum on-resistance?

1.95 Ohms at 1.65A and 10V gate drive.

What is the gate charge?

31 nC maximum at 10V.

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