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FQPF6N80C N-Channel MOSFET rated for 800V drain-source voltage and 5.5A continuous drain current. Housed in a TO-220F-3 through-hole package.
Mfr Part #:

FQPF6N80C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 5.5A continuous drain current. Housed in a TO-220F-3 through-hole package.
✓ Total Stock: 14,600 pcs

FQPF6N80C Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
13,600 pcs
On Request
13600 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQPF6N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF6N80C Description

Short technical summary and product information.

The FQPF6N80C is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage rating of 800V and a continuous drain current of 5.5A at case temperature. The device has a maximum on-resistance of 2.5 Ohms at 10V gate drive and 2.75A drain current. Gate charge is 30 nC at 10V, and input capacitance is 1310 pF at 25V drain-source. The MOSFET is through-hole mounted in a TO-220-3 Full Pack package (TO-220F-3). It can dissipate up to 51W at case temperature and operates over a junction temperature range of -55°C to 150°C. This device is suitable for power supply, inverter, and other high-voltage switching circuits.

FQPF6N80C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 800V Drain-Source, 5.5A Drain Current, TO-220F-3 Package
Subcategory: Single MOSFET

FQPF6N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF6N80C Features

  • 800V drain-source voltage rating.
  • 5.5A continuous drain current.
  • 2.5 Ohm maximum on-resistance.
  • TO-220F-3 through-hole package.
  • Operating temperature range -55°C to 150°C.

FQPF6N80C Applications

  • Used in high-voltage power supplies.
  • Suitable for inverter circuits.
  • Ideal for switching applications.
  • Applicable in motor control systems.

FQPF6N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

800V.

What is the maximum drain current?

5.5A at case temperature.

What is the on-resistance?

2.5 Ohms max at Vgs=10V, Id=2.75A.

What is the gate charge?

30 nC at Vgs=10V.

What is the operating temperature range?

-55°C to 150°C junction.

What package does it come in?

TO-220-3 Full Pack (TO-220F-3).

Is it RoHS compliant?

Yes, RoHS3 Compliant (unverified).

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