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FQPF5P20RDTU FQPF5P20RDTU is a P-Channel MOSFET from On Semiconductor, rated for 200V drain-source voltage and 2.15A continuous drain current. It is housed in a TO-220F full pack package.
Mfr Part #:

FQPF5P20RDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF5P20RDTU is a P-Channel MOSFET from On Semiconductor, rated for 200V drain-source voltage and 2.15A continuous drain current. It is housed in a TO-220F full pack package.
✓ Total Stock: 4,800 pcs
$ Price Range: $0.59 - $0.64

FQPF5P20RDTU Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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4,800 pcs
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4800 pcs On Request 1 On Request On Request On Request On Request On Request
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FQPF5P20RDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF5P20RDTU Description

Short technical summary and product information.

The FQPF5P20RDTU is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 2.15A at case temperature (Tc). The maximum on-resistance (Rds(on)) is 1.4 Ohm at a gate drive of 10V and drain current of 1.7A. The gate charge (Qg) is 13 nC at 10V, and the input capacitance (Ciss) is 430 pF at 25V drain-source voltage. The threshold voltage (Vgs(th)) is 5V maximum at 250µA drain current.

 

This device is designed for high-voltage switching applications and offers a maximum power dissipation of 38W at Tc. It operates over a junction temperature range of -55°C to 150°C. The MOSFET is through-hole mounted and comes in a TO-220-3 Full Pack (TO-220F) package, which provides electrical isolation. The supplier device package is TO-220F.

 

The FQPF5P20RDTU is suitable for a variety of power management and load switching circuits where high-side P-Channel switching is required. Its low on-resistance and moderate gate charge enable efficient switching performance.

FQPF5P20RDTU Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 200V Drain-Source, 2.15A Continuous Drain, TO-220F
Subcategory: P-Channel MOSFET

FQPF5P20RDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF5P20RDTU Estimated Pricing

Qty Low High
800+ $0.64 $0.64
1,600+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF5P20RDTU Features

  • P-Channel MOSFET for high-side switching.
  • Rated for 200V drain-source voltage.
  • Continuous drain current of 2.15A.
  • Low on-resistance of 1.4 Ohm.
  • Through-hole TO-220F package.

FQPF5P20RDTU Applications

  • Ideal for high-voltage load switching.
  • Used in power management circuits.
  • Suitable for battery protection circuits.
  • Applicable in DC-DC converters.
  • Can be used in motor control applications.

FQPF5P20RDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF5P20RDTU?

200V.

What is the continuous drain current rating?

2.15A at case temperature (Tc).

What is the maximum on-resistance?

1.4 Ohm at 1.7A drain current and 10V gate drive.

What is the gate charge?

13 nC at 10V gate drive.

What package is the FQPF5P20RDTU in?

TO-220-3 Full Pack (TO-220F).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQPF5P20RDTU RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

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