| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,000 pcs
|
29000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF5P20 is a P-Channel enhancement-mode MOSFET manufactured using advanced MOSFET technology from On Semiconductor. This device is designed for medium-voltage power switching applications requiring high efficiency and robustness.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 200V, continuous drain current of 3.4A at case temperature (Tc), and a maximum on-resistance (Rds(on)) of 1.4Ω at Vgs=10V and Id=1.7A. The gate threshold voltage is at most 5V at Id=250µA, and the maximum gate-source voltage is ±30V. The device features a typical gate charge of 13nC at Vgs=10V and input capacitance of 430pF at Vds=25V, enabling moderate switching speeds.
The FQPF5P20 is supplied in a TO-220F-3 full-pack package, which provides full isolation between the mounting tab and the die. This simplifies heatsinking in applications where electrical isolation is required. The device is mounted via through-hole, making it suitable for conventional PCB assembly processes. The operating junction temperature range is -55°C to +150°C, and maximum power dissipation is 38W at Tc.
| Qty | Low | High |
|---|---|---|
| 478+ | $0.63 | $0.63 |
| 1,000+ | $0.55 | $0.55 |
| 2,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The maximum continuous drain current (Id) is 3.4A at case temperature (Tc).
It is housed in a TO-220-3 Full Pack package (also referred to as TO-220F-3), through-hole mounting.
The operating junction temperature range is -55°C to +150°C.
The maximum drain-source on-resistance is 1.4 Ohms at a gate voltage of 10V and drain current of 1.7A.
The maximum gate-source voltage rating is ±30V.
The maximum gate threshold voltage is 5V at a drain current of 250µA.