FQPF5N60C FQPF5N60C is an N-Channel MOSFET from On Semiconductor with a 600V drain-source breakdown voltage and 4.5A continuous drain current. It features a maximum on-resistance of 2.5 Ohm and is housed in a TO-220F-3 through-hole package.
Mfr Part #:

FQPF5N60C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF5N60C is an N-Channel MOSFET from On Semiconductor with a 600V drain-source breakdown voltage and 4.5A continuous drain current. It features a maximum on-resistance of 2.5 Ohm and is housed in a TO-220F-3 through-hole package.
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FQPF5N60C Available from 3 distributors

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FQPF5N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF5N60C Description

Short technical summary and product information.

The FQPF5N60C is an N-Channel MOSFET manufactured by On Semiconductor, designed for high-voltage switching applications. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 4.5A at case temperature (Tc). The device has a maximum drain-source on-resistance of 2.5 Ohm at a gate voltage of 10V and a drain current of 2.25A.

 

This MOSFET features a maximum gate-source voltage of ±30V and a gate threshold voltage of 4V at 250 µA. Its input capacitance is 670 pF at 25V drain-source, and the total gate charge is 19 nC at 10V gate-source. The device can dissipate up to 33W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FQPF5N60C is supplied in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting, making it suitable for power supply, lighting, and other general-purpose power switching circuits.

FQPF5N60C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQPF5N60C N-Channel MOSFET
Subcategory: Single MOSFET

FQPF5N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF5N60C Features

  • N-Channel MOSFET with 600V drain-source breakdown.
  • 4.5A continuous drain current at case temperature.
  • 2.5 Ohm maximum on-resistance at 10V gate drive.
  • TO-220F-3 through-hole package for easy mounting.
  • RoHS compliant for environmental compliance.

FQPF5N60C Applications

  • Ideal for high-voltage power supply circuits.
  • Used in AC-DC converters and inverters.
  • Suitable for motor control and lighting applications.
  • Applicable in general-purpose power switching designs.

FQPF5N60C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FQPF5N60C?

The drain-source breakdown voltage is 600V.

What is the maximum continuous drain current of the FQPF5N60C?

The maximum continuous drain current is 4.5A at case temperature (Tc).

What is the package type of the FQPF5N60C?

The FQPF5N60C is available in a TO-220-3 Full Pack package (TO-220F-3) for through-hole mounting.

What is the operating temperature range of the FQPF5N60C?

The operating junction temperature range is -55°C to 150°C.

Is the FQPF5N60C RoHS compliant?

Yes, the FQPF5N60C is listed as RoHS3 compliant.

What is the maximum on-resistance of the FQPF5N60C?

The maximum drain-source on-resistance is 2.5 Ohm at a gate voltage of 10V and drain current of 2.25A.

What is the gate threshold voltage of the FQPF5N60C?

The maximum gate threshold voltage is 4V at a drain current of 250 µA.

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