| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,664 pcs
|
4664 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF5N50CYDTU is an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in avalanche and commutation modes.
The device is rated for a drain-source voltage of 500V and a continuous drain current of 5A at Tc=25°C. It features a maximum on-resistance of 1.4Ω at Vgs=10V and Id=2.5A. The gate charge is typically 18nC, and the reverse transfer capacitance is typically 15pF, enabling fast switching.
This MOSFET is well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology. It is 100% avalanche tested with a single pulsed avalanche energy rating of 300mJ.
The device is offered in a TO-220-3 Full Pack package with formed leads (TO-220F-3), designed for through-hole mounting. The junction-to-case thermal resistance is 3.31°C/W, and the operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1,600+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 500V minimum.
It is available in a TO-220-3 Full Pack package with formed leads (TO-220F-3).
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The typical gate charge (Qg) is 18 nC at Vgs = 10V.
The maximum Rds(on) is 1.4Ω at Id = 2.5A and Vgs = 10V.
The single pulsed avalanche energy (EAS) is 300 mJ under specified test conditions.