FQPF5N50CFTU

The FQPF5N50CFTU is an N-Channel enhancement mode power MOSFET produced using Fairchild's planar stripe DMOS technology (now part of On Semiconductor). This device is designed for high efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies. It offers a drain-source voltage of 500V, continuous drain current of 5A at 25°C (2.9A at 100°C), and a pulsed drain current of 20A. The maximum on-resistance is 1.55 Ohm at Vgs=10V and Id=2.5A. The gate threshold voltage is 4V max at 250µA. The device features low gate charge (typical 18nC, max 24nC) and low input capacitance (max 625pF), contributing to fast switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 300mJ. The peak diode recovery dv/dt is 4.5 V/ns. The maximum power dissipation is 38W at case temperature 25°C. The operating junction temperature range is -55°C to 150°C. The device is available in a TO-220F full pack through-hole package (TO-220-3 full pack), with a thermal resistance junction-to-case of 3.31°C/W and junction-to-ambient of 62.5°C/W. The mounting type is through hole. Compliance status: RoHS3 compliant, MSL level 1, and REACH unaffected (all unverified).