| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current - Pulsed (IDM) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance (gfs) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation Derating | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Crss) | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| drain_current_continuous (Maximum @ Tc=100 °C) |
The FQPF50N06 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's proprietary planar stripe DMOS technology. It is designed for low voltage applications requiring high efficiency switching and low on-state resistance.
Key electrical specifications include a drain-source voltage rating of 60V, continuous drain current of 31A at 25°C (21.9A at 100°C), and a maximum on-resistance of 22 mΩ at VGS = 10V. The device features low gate charge (typical 31 nC) and low reverse transfer capacitance (typical 65 pF) for fast switching performance. It is 100% avalanche tested with a single pulse avalanche energy rating of 495 mJ.
The MOSFET is housed in a TO-220F package, which provides isolation and good thermal performance. The maximum power dissipation is 47W at 25°C case temperature, with a junction-to-case thermal resistance of 3.22 °C/W. Operating junction temperature range is -55°C to 175°C.
Typical applications include automotive electronics, DC/DC converters, and power management in portable and battery-operated products. The device is suitable for high efficiency switching circuits where low conduction and switching losses are required.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60 V.
The continuous drain current is 31 A at TC = 25°C and 21.9 A at TC = 100°C.
The maximum on-resistance is 22 mΩ at VGS = 10 V, ID = 15.5 A; typical is 18 mΩ.
The operating junction temperature range is -55°C to 175°C.
The typical gate charge is 31 nC, with a maximum of 41 nC at VGS = 10 V.
The device is housed in a TO-220F package.
The single pulse avalanche energy (EAS) is 495 mJ.