| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF4N90CT is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 900V and a continuous drain current of 4A at 25°C case temperature.
The device has a maximum on-resistance of 4.2 Ohms at 2A gate drive of 10V. Gate threshold voltage is 5V maximum at 250µA. Total gate charge is 22 nC at 10V, and input capacitance is 960 pF at 25V drain-source. Maximum power dissipation is 47W at case temperature.
The MOSFET is through-hole mounted in a TO-220-3 Full Pack package (supplier device package TO-220F-3). It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
This MOSFET is suitable for high-voltage switching circuits such as power supplies, inverters, and motor drives. Its through-hole package allows for easy mounting on PCBs.
-55°C to 150°C (junction temperature).
TO-220-3 Full Pack (TO-220F-3).
Yes, it is RoHS3 compliant.
900V.
4A at 25°C case temperature.
4.2 Ohms at 2A and 10V gate drive.
5V maximum at 250µA drain current.