| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
530 pcs
|
530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF4N90C is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 4A at case temperature. The device offers a drain-source on-resistance of 4.2 Ohms maximum at 2A drain current and 10V gate drive, with a gate threshold voltage of 5V maximum at 250µA.
This MOSFET utilizes standard MOSFET (Metal Oxide) technology and is suitable for various power supply and conversion circuits. The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing good thermal performance with a maximum power dissipation of 47W at case temperature. The operating junction temperature range is -55°C to 150°C.
Design considerations include a typical gate charge of 22 nC at 10V gate-source voltage and an input capacitance of 960 pF at 25V drain-source voltage. The maximum gate-source voltage rating is ±30V. The recommended gate drive voltage is 10V for optimal on-resistance.
The maximum drain-source voltage is 900V.
The continuous drain current is 4A at case temperature.
It is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The junction temperature range is -55°C to 150°C.
The maximum drain-source on-resistance is 4.2 Ohms at 2A drain current and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA drain current.
The device is marked as RoHS3 compliant, but this has not been verified and should be treated as low confidence.