FQPF47P06 The FQPF47P06 is a P-Channel QFET MOSFET from onsemi, rated for -60V and -30A with a low on-resistance of 26mOhm. It comes in a TO-220F-3 through-hole package.
Mfr Part #:

FQPF47P06

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQPF47P06 is a P-Channel QFET MOSFET from onsemi, rated for -60V and -30A with a low on-resistance of 26mOhm. It comes in a TO-220F-3 through-hole package.
✓ Total Stock: 6,877 pcs

FQPF47P06 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,314 pcs
3314 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,543 pcs
1543 pcs On Request 1 On Request On Request On Request On Request On Request

FQPF47P06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF47P06 Description

Short technical summary and product information.

The FQPF47P06 is a P-Channel enhancement mode power MOSFET manufactured using onsemi's proprietary planar stripe and DMOS technology. It is designed to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. Key electrical specifications include a drain-source voltage of -60V, continuous drain current of -30A at 25°C case temperature, and a maximum on-resistance of 26mOhm at Vgs=-10V. The device features a typical gate charge of 84nC and input capacitance of 3600pF, enabling efficient switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 820mJ. The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for mounting on heatsinks. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 62W. Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power supplies.

FQPF47P06 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FQPF47P06 P-Channel MOSFET, -60V, -30A, 26mOhm, TO-220F-3
Subcategory: Single MOSFET

FQPF47P06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF47P06 Features

  • P-Channel QFET MOSFET technology.
  • Rated for -60V drain-source voltage.
  • Continuous drain current of -30A.
  • Low on-resistance of 26mOhm at 10V.
  • 100% avalanche tested for reliability.

FQPF47P06 Applications

  • Used in switched mode power supplies.
  • Ideal for audio amplifier circuits.
  • Suitable for DC motor control.
  • For variable switching power applications.

FQPF47P06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the FQPF47P06?

-55°C to 175°C (junction temperature)

What package does the FQPF47P06 come in?

TO-220-3 Full Pack (also known as TO-220F-3), through-hole mounting

Is the FQPF47P06 RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the drain-source breakdown voltage?

-60V

What is the continuous drain current rating?

-30A at 25°C case temperature

What is the typical gate charge?

84 nC typical

What is the single pulse avalanche energy rating?

820 mJ

Home
Account

Categories