| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF47P06 is a P-Channel enhancement mode power MOSFET manufactured using onsemi's proprietary planar stripe and DMOS technology. It is designed to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. Key electrical specifications include a drain-source voltage of -60V, continuous drain current of -30A at 25°C case temperature, and a maximum on-resistance of 26mOhm at Vgs=-10V. The device features a typical gate charge of 84nC and input capacitance of 3600pF, enabling efficient switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 820mJ. The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for mounting on heatsinks. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 62W. Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power supplies.
-55°C to 175°C (junction temperature)
TO-220-3 Full Pack (also known as TO-220F-3), through-hole mounting
It is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
-60V
-30A at 25°C case temperature
84 nC typical
820 mJ