| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The FQPF3P50 is a 500V P-Channel Enhancement Mode Power MOSFET from On Semiconductor (originally Fairchild Semiconductor). It features a continuous drain current of -1.9A at 25°C (rated at -1.2A at 100°C) and a typical on-resistance of 3.9 Ω with a maximum of 4.9 Ω at VGS = -10V. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance. It offers low gate charge (typical 18 nC) and low reverse transfer capacitance (typical 9.5 pF) for fast switching. Designed for 100% avalanche testing, the part demonstrates a single pulsed avalanche energy rating of 250 mJ and a repetitive avalanche energy rating of 3.9 mJ. It operates over a junction temperature range of -55°C to +150°C with a maximum power dissipation of 39W at case temperature 25°C. The FQPF3P50 is housed in a TO-220-3 Full Pack through-hole package (supplier package TO-220F-3) and is suited for applications such as electronic lamp ballasts based on complementary half-bridge topologies. The part is rated as RoHS3 compliant and REACH unaffected (unverified from source).
The maximum drain-source voltage (VDSS) is -500 V.
It is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to +150°C.
It is marked as RoHS3 Compliant, but this data is unverified.
The continuous drain current (ID) at TC = 25°C is -1.9 A.
The typical drain-source on-resistance is 3.9 Ω, with a maximum of 4.9 Ω at VGS = -10V.
Maximum power dissipation (PD) at TC = 25°C is 39 W.