| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage Temperature Coefficient (ID = -250µA, referenced to 25°C) | |
| Current | |
| Drain Current - Pulsed (Tc = 25°C (Note 1)) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (VGS = 0V, ID = -250µA) | |
| Drain-Source On-Resistance (VGS = -10V, ID = -0.95A) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance (VDS = -50V, ID = -0.95A) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Vgs=-10V) | |
| Gate Threshold Voltage (VDS=VGS, ID=-250µA) | |
| Gate-Body Leakage Current, Forward (VGS = -30V, VDS = 0V) | |
| Gate-Body Leakage Current, Reverse (VGS = 30V, VDS = 0V) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt (ISD ≤ -2.7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C) | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Repetitive Avalanche Energy | |
| Reverse Transfer Capacitance | |
| Single Pulsed Avalanche Energy (L = 125mH, IAS = -1.9A, VDD = -50V, RG = 25Ω, Starting TJ = 25°C) | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (VDS = -500V, VGS = 0V) | |
| drain_current_continuous (Maximum @ Tc=100 °C) | |
| drain_current_continuous (Maximum @ Tc=25 °C) |
The FQPF3P50 is a 500V P-Channel Enhancement Mode Power MOSFET from On Semiconductor (originally Fairchild Semiconductor). It features a continuous drain current of -1.9A at 25°C (rated at -1.2A at 100°C) and a typical on-resistance of 3.9 Ω with a maximum of 4.9 Ω at VGS = -10V. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance. It offers low gate charge (typical 18 nC) and low reverse transfer capacitance (typical 9.5 pF) for fast switching. Designed for 100% avalanche testing, the part demonstrates a single pulsed avalanche energy rating of 250 mJ and a repetitive avalanche energy rating of 3.9 mJ. It operates over a junction temperature range of -55°C to +150°C with a maximum power dissipation of 39W at case temperature 25°C. The FQPF3P50 is housed in a TO-220-3 Full Pack through-hole package (supplier package TO-220F-3) and is suited for applications such as electronic lamp ballasts based on complementary half-bridge topologies. The part is rated as RoHS3 compliant and REACH unaffected (unverified from source).
The maximum drain-source voltage (VDSS) is -500 V.
It is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to +150°C.
It is marked as RoHS3 Compliant, but this data is unverified.
The continuous drain current (ID) at TC = 25°C is -1.9 A.
The typical drain-source on-resistance is 3.9 Ω, with a maximum of 4.9 Ω at VGS = -10V.
Maximum power dissipation (PD) at TC = 25°C is 39 W.