| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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425 pcs
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425 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The FQPF3N90 is a 900V N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in avalanche and commutation modes. The device is well suited for high efficiency switch mode power supplies.
Key electrical specifications include a drain-source voltage rating of 900V, continuous drain current of 2.1A at 25°C (1.33A at 100°C), and a maximum on-resistance of 4.25Ω at VGS=10V. It features low gate charge (20nC typical) and low reverse transfer capacitance (8pF typical) for efficient switching. The device is 100% avalanche tested with a single pulse avalanche energy rating of 450mJ and improved dv/dt capability.
The FQPF3N90 is packaged in a TO-220-3 Full Pack (TO-220F) through-hole package, providing isolation. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 43W. Thermal resistance junction-to-case is 2.9°C/W and junction-to-ambient is 62.5°C/W.
The drain-source voltage (VDSS) is 900V.
The continuous drain current is 2.1A at TC=25°C and 1.33A at TC=100°C.
The drain-source on-resistance (RDS(on)) is 3.3Ω typical and 4.25Ω maximum at VGS=10V, ID=1.05A.
The operating junction temperature range is -55°C to 150°C.
The FQPF3N90 is available in a TO-220-3 Full Pack (TO-220F) through-hole package.
The FQPF3N90 is listed as RoHS3 compliant, but this information is unverified and should be confirmed with official documentation.
The gate threshold voltage (VGS(th)) ranges from 3.0V to 5.0V at VDS=VGS, ID=250µA.