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FQPF3N80C N-Channel MOSFET with 800V drain-source voltage and 3A continuous drain current, in TO-220F package.
Mfr Part #:

FQPF3N80C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 800V drain-source voltage and 3A continuous drain current, in TO-220F package.
✓ Total Stock: 5,000 pcs

FQPF3N80C Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQPF3N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF3N80C Description

Short technical summary and product information.

The FQPF3N80C is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This device is designed to reduce on-state resistance and provide superior switching performance with high avalanche energy strength.

 

Key electrical specifications include a drain-source voltage (Vdss) of 800V, continuous drain current of 3A at 25°C (1.9A at 100°C), and a maximum on-resistance of 4.8 Ohm at Vgs = 10V and Id = 1.5A. The gate threshold voltage is 5V maximum at Id = 250µA. The device features low gate charge (typical 13 nC) and low output capacitance (Crss typical 5.5 pF), supporting efficient high-frequency switching.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) package with through-hole mounting. It is rated for operating junction temperatures from -55°C to +150°C and has a maximum power dissipation of 39W at case temperature 25°C. The device is 100% avalanche tested with a single pulsed avalanche energy rating of 320 mJ.

FQPF3N80C Quick Information

Product Type: MOSFET
Canonical Name: FQPF3N80C N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQPF3N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF3N80C Features

  • 800V drain-source breakdown voltage.
  • 3A continuous drain current at 25°C.
  • Low on-resistance of 4.8 Ohm at 10V.
  • Low gate charge typical 13 nC.
  • 100% avalanche tested.

FQPF3N80C Applications

  • Suitable for switched mode power supplies.
  • Active power factor correction (PFC) circuits.
  • Electronic lamp ballasts.
  • High efficiency DC-DC converters.

FQPF3N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF3N80C?

800V.

What is the package type of the FQPF3N80C?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to +150°C (junction).

Is the FQPF3N80C RoHS compliant?

RoHS3 compliant, but status is unverified and should be confirmed via official documentation.

What is the gate threshold voltage?

5V maximum at Vds = Vgs, Id = 250 µA.

What is the on-resistance at 10V gate drive?

4.8 Ohm maximum at Vgs = 10V, Id = 1.5A.

What is the single pulsed avalanche energy rating?

320 mJ.

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