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FQPF3N25 FQPF3N25 is a single N-Channel MOSFET by ON Semiconductor, rated for 250V drain-source voltage and 2.3A continuous drain current. It is offered in a TO-220-3 Full Pack (TO-220F) through-hole package.
Mfr Part #:

FQPF3N25

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF3N25 is a single N-Channel MOSFET by ON Semiconductor, rated for 250V drain-source voltage and 2.3A continuous drain current. It is offered in a TO-220-3 Full Pack (TO-220F) through-hole package.
✓ Total Stock: 8,000 pcs

FQPF3N25 Available from 1 distributor

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FQPF3N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF3N25 Description

Short technical summary and product information.

The FQPF3N25 is an N-Channel enhancement mode MOSFET fabricated using metal oxide semiconductor technology. It is designed to handle a maximum drain-source voltage of 250V and a continuous drain current of 2.3A at case temperature. The device features a maximum on-resistance of 2.2 Ohms at a gate-source voltage of 10V and drain current of 1.15A. Gate charge is typically 5.2 nC at 10V, and input capacitance is 170 pF at 25V drain-source bias, enabling moderate switching performance.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, which provides electrical isolation and facilitates heat sinking. Maximum power dissipation is 27W at case temperature with an operating junction temperature range of -55°C to 150°C. The device is reported to be RoHS3 compliant, REACH unaffected, and has a moisture sensitivity level of 1 (unlimited).

 

This component is suitable for a variety of power switching applications where high voltage and moderate current are required. Its through-hole mounting makes it convenient for prototyping and low-volume production. The TO-220F package simplifies thermal management by eliminating the need for additional insulation.

FQPF3N25 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: N-Channel MOSFET 250V 2.3A TO-220F
Subcategory: Single N-Channel MOSFET

FQPF3N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF3N25 Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • 2.3A continuous drain current rating.
  • Low gate charge of 5.2 nC for fast switching.
  • Max on-resistance of 2.2 Ohms at 1.15A, 10V.
  • TO-220F through-hole package for easy mounting.

FQPF3N25 Applications

  • Switching applications requiring 250V voltage rating.
  • Medium power loads up to 2.3A continuous current.
  • Through-hole mounting for prototyping and production.

FQPF3N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF3N25?

250V.

What package does the FQPF3N25 come in?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQPF3N25 RoHS compliant?

It is reported as RoHS3 compliant, but this data is unverified.

What is the maximum gate charge of the FQPF3N25?

5.2 nC at 10V gate-source voltage.

What is the maximum input capacitance?

170 pF at 25V drain-source voltage.

What is the maximum on-resistance?

2.2 Ohms at 1.15A drain current and 10V gate-source voltage.

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