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FQPF34N20 N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 17.5A continuous drain current. Features 75mOhm on-resistance and TO-220F-3 through-hole package.
Mfr Part #:

FQPF34N20

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 17.5A continuous drain current. Features 75mOhm on-resistance and TO-220F-3 through-hole package.
✓ Total Stock: 6 pcs

FQPF34N20 Available from 1 distributor

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FQPF34N20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF34N20 Description

Short technical summary and product information.

The FQPF34N20 is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 17.5A at 25°C case temperature. The device has a maximum on-resistance of 75mOhm at 8.75A and 10V gate drive. Gate threshold voltage is 5V maximum at 250µA drain current. The MOSFET offers a gate charge of 78nC at 10V and input capacitance of 3100pF at 25V drain-source voltage. Maximum power dissipation is 55W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The device is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting. This MOSFET is suitable for switching and amplification applications requiring high voltage and moderate current handling. The fully isolated package provides electrical isolation between the mounting tab and the die, simplifying heatsink design.

FQPF34N20 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 200V, 17.5A, TO-220F-3
Subcategory: Single MOSFET

FQPF34N20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF34N20 Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 17.5A.
  • Low on-resistance of 75mOhm maximum.
  • TO-220F-3 through-hole isolated package.
  • Operating temperature range -55°C to 150°C.

FQPF34N20 Applications

  • Suitable for power supply switching circuits.
  • Used in motor control and inverter designs.
  • Ideal for high-voltage DC-DC converters.
  • Applicable in battery charging systems.

FQPF34N20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF34N20?

200V.

What is the continuous drain current?

17.5A at 25°C case temperature.

What is the on-resistance?

75mOhm maximum at 8.75A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C (junction).

What package does the FQPF34N20 come in?

TO-220-3 Full Pack (TO-220F-3) through-hole.

Is the FQPF34N20 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

5V maximum at 250µA.

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