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FQPF33N10 FQPF33N10 is an N-Channel MOSFET from On Semiconductor with 100V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 52mOhm and is housed in a TO-220F full pack package.
Mfr Part #:

FQPF33N10

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF33N10 is an N-Channel MOSFET from On Semiconductor with 100V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 52mOhm and is housed in a TO-220F full pack package.
✓ Total Stock: 20,000 pcs

FQPF33N10 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
12,000 pcs
On Request
12000 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
8,000 pcs
On Request
8000 pcs On Request 1 On Request On Request On Request On Request On Request
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FQPF33N10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF33N10 Description

Short technical summary and product information.

The FQPF33N10 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for switching applications requiring a drain-source voltage (Vdss) of up to 100V and a continuous drain current (Id) of 18A at case temperature (Tc). The device features a maximum on-resistance (Rds(on)) of 52mOhm at Vgs=10V and Id=9A, ensuring efficient power handling.

 

The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA. Total gate charge (Qg) is 51nC at Vgs=10V, and input capacitance (Ciss) is 1500pF at Vds=25V, which are important for switching speed considerations. Maximum power dissipation is 41W at case temperature, and the operating junction temperature range is -55°C to 175°C.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, suitable for PCB mounting. It is listed as RoHS3 compliant, though this status is unverified. The part is commonly used in power supply circuits, DC-DC converters, and motor control applications.

FQPF33N10 Quick Information

Product Type: MOSFET
Series: FQPF
Canonical Name: FQPF33N10 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQPF33N10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF33N10 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 18A.
  • Low on-resistance of 52mOhm maximum.
  • Through-hole TO-220F full pack package.
  • RoHS3 compliant (unverified).

FQPF33N10 Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

FQPF33N10 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF33N10?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The maximum continuous drain current is 18A at case temperature (Tc).

What is the on-resistance of the FQPF33N10?

The maximum on-resistance (Rds(on)) is 52mOhm at Vgs=10V and Id=9A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FQPF33N10 available in?

It is available in a TO-220-3 Full Pack (TO-220F) through-hole package.

Is the FQPF33N10 RoHS compliant?

It is listed as RoHS3 compliant, but this information is unverified.

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