| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF30N06L is an N-Channel MOSFET from On Semiconductor designed for power switching applications. It has a maximum drain-to-source voltage of 60V and supports a continuous drain current of 22.5A at case temperature Tc. The maximum drain-source on-resistance is 35mΩ at a gate drive of 10V and drain current of 11.3A.
Electrical characteristics include a maximum gate threshold voltage of 2.5V at 250µA, gate charge of 20nC at Vgs=5V, and input capacitance of 1040pF at Vds=25V. The device supports drive voltages of 5V and 10V, with a maximum gate-source voltage rating of ±20V. Maximum power dissipation is 38W at case temperature, and the operating junction temperature range is -55°C to 175°C.
The device is offered in a TO-220-3 full pack package (TO-220F-3) with through-hole mounting. This MOSFET uses metal-oxide semiconductor technology.
The maximum drain-to-source voltage (Vdss) is 60 V.
The maximum continuous drain current is 22.5 A at case temperature Tc.
The maximum drain-source on-resistance is 35 mΩ at Id = 11.3 A and Vgs = 10 V.
It is offered in a TO-220-3 Full Pack package, also called TO-220F-3, with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
RoHS3 compliant according to existing database data, though the status is unverified.
The maximum gate threshold voltage is 2.5 V at Id = 250 µA.