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FQPF2N90 FQPF2N90 is an N-Channel power MOSFET from ON Semiconductor with 900V drain-source voltage and 1.4A continuous drain current in a TO-220F-3 full pack package.
Mfr Part #:

FQPF2N90

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF2N90 is an N-Channel power MOSFET from ON Semiconductor with 900V drain-source voltage and 1.4A continuous drain current in a TO-220F-3 full pack package.
✓ Total Stock: 2,568 pcs

FQPF2N90 Available from 1 distributor

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Components Technology Group, Inc. ✓
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2,568 pcs
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FQPF2N90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF2N90 Description

Short technical summary and product information.

The FQPF2N90 is an N-Channel MOSFET designed by ON Semiconductor using Metal Oxide technology. It features a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 1.4A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 7.2 Ohm at 700mA drain current and 10V gate drive.

 

Gate threshold voltage is a maximum of 5V at 250µA drain current, and the recommended drive voltage is 10V. The maximum gate charge is 15 nC at 10V, and input capacitance is 500 pF at 25V drain-source voltage. Maximum power dissipation is 35W at case temperature. The junction temperature range spans -55°C to 150°C.

 

This MOSFET is supplied in a through-hole TO-220-3 Full Pack (TO-220F-3) package, offering easy mounting and good thermal performance. Typical applications include switching power supplies, high-voltage inverters, and general-purpose power switching circuits.

FQPF2N90 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQPF2N90 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FQPF2N90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF2N90 Features

  • N-Channel power MOSFET with 900V rating.
  • Maximum continuous drain current of 1.4A.
  • Low on-resistance of 7.2 Ohm typical.
  • Through-hole TO-220F-3 full pack package.
  • Operating temperature range from -55 to 150°C.

FQPF2N90 Applications

  • High-voltage switching power supply circuits.
  • Inverter and converter topologies.
  • Power management in industrial equipment.
  • General purpose high-voltage load switching.

FQPF2N90 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of FQPF2N90?

The maximum drain-to-source voltage (Vdss) is 900V.

What package does the FQPF2N90 come in?

The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range of FQPF2N90?

The operating junction temperature range is -55°C to 150°C.

Is the FQPF2N90 RoHS compliant?

The marked RoHS status is RoHS3 Compliant, but this is unverified based on available data sources.

What is the maximum on-resistance of FQPF2N90?

The maximum drain-to-source on-resistance (Rds(on)) is 7.2 Ohm at 700mA drain current and 10V gate drive.

What is the gate threshold voltage of FQPF2N90?

The maximum gate threshold voltage (Vgs(th)) is 5V at 250µA drain current.

What is the maximum power dissipation of FQPF2N90?

Maximum power dissipation is 35W at case temperature (Tc).

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