| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,020 pcs
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2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF2N80 is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for high-voltage power conversion applications.
Key electrical specifications include a maximum drain-source voltage of 800V, continuous drain current of 1.5A at 25°C (0.95A at 100°C), and a maximum on-resistance of 6.3 Ohm at 750mA and 10V gate drive. The gate charge is typically 12 nC, and input capacitance is 550 pF at 25V. Single pulsed avalanche energy is rated at 180 mJ, ensuring robustness in rugged environments.
The device is housed in a through-hole TO-220-3 Full Pack package (TO-220F-3) with a junction-to-case thermal resistance of 3.57°C/W and a power dissipation of 35W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C.
Typical applications include switched mode power supplies, active power factor correction (PFC) circuits, and electronic lamp ballasts. The device is listed as RoHS3 compliant (unverified) and has an MSL of 1.
The maximum drain-source voltage is 800 V.
The continuous drain current is 1.5 A at 25°C case temperature and 0.95 A at 100°C.
The maximum on-resistance is 6.3 Ohm at 750 mA drain current and 10 V gate-source voltage; typical is 4.6 Ohm.
The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge is 15 nC at 10 V gate-source voltage; typical is 12 nC.
The device is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.