| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF2N70 is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is rated for a maximum drain-to-source voltage (Vdss) of 700V and a continuous drain current (Id) of 2A at case temperature. The device has a maximum on-state resistance (Rds(on)) of 6.3Ω at a gate-to-source voltage of 10V and a drain current of 1A.
The MOSFET is supplied in a TO-220-3 Full Pack (TO-220F-3) through-hole package, offering a fully isolated heat-tab for simplified thermal management. It can dissipate up to 28W at case temperature and operates across a junction temperature range of -55°C to +150°C. The gate-source voltage maximum is ±30V, and the maximum gate threshold voltage is 5V at 250µA.
Switching characteristics are defined by a maximum gate charge of 11nC at 10V gate drive and a maximum input capacitance of 350pF at 25V drain-source voltage. These values make the FQPF2N70 appropriate for moderate-frequency, high-voltage switching circuits in through-hole board designs.
700V.
2A at case temperature.
TO-220-3 Full Pack (TO-220F-3), through-hole.
-55°C to +150°C.
Yes, it is listed as RoHS3 compliant in the available data.
6.3Ω at Vgs=10V and Id=1A.
5V at 250µA drain current.