Mfr Part #:

FQPF2N60C

N-Channel MOSFET rated for 600V drain-source voltage and 2A continuous drain current. Features 4.7Ω maximum on-resistance at 10V gate drive and is housed in a TO-220F full pack through-hole package.

✓ Total Stock: 17,999 pcs

FQPF2N60C Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	10,455 pcs On Request	10455 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	7,500 pcs On Request	7500 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	44 pcs On Request	44 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQPF2N60C Description

Short technical summary and product information.

The FQPF2N60C is an N-Channel MOSFET from On Semiconductor designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 2A at case temperature. The device offers a maximum on-resistance of 4.7Ω at a gate drive of 10V and 1A drain current, with a gate charge of 12nC for efficient switching. Input capacitance is 235pF at 25V drain-source bias. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage is ±30V. Power dissipation is rated at 23W at case temperature, with an operating junction temperature range of -55°C to 150°C. The MOSFET is packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for isolated mounting. This device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is commonly used in power supplies, inverters, and other high-voltage switching circuits where low on-resistance and fast switching are required.

FQPF2N60C Quick Information

Product Type: MOSFET

Canonical Name: FQPF2N60C N-Channel MOSFET

Subcategory: N-Channel MOSFET

FQPF2N60C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQPF2N60C Features

N-Channel MOSFET rated for 600V drain-source voltage.
Continuous drain current of 2A at case temperature.
Maximum on-resistance of 4.7Ω at 10V gate drive.
Housed in TO-220F full pack through-hole package.
RoHS3 compliant with MSL 1 rating.

FQPF2N60C Applications

Used in high-voltage DC-DC converters.
Suitable for power supply switching circuits.
Ideal for inverter and motor control applications.
Applied in auxiliary power supplies.

FQPF2N60C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQPF2N60C?

600V.

What package does the FQPF2N60C come in?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range of the FQPF2N60C?

-55°C to 150°C (junction temperature).

Is the FQPF2N60C RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate charge of the FQPF2N60C?

12 nC at 10V gate-source voltage.

What is the on-resistance of the FQPF2N60C?

4.7Ω maximum at 1A drain current and 10V gate drive.

What is the continuous drain current rating of the FQPF2N60C?

2A at case temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	23 W
Rds On (Max) @ Id, Vgs	4.7 Ω
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Termination Style	Through Hole
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V