| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
163 pcs
|
163 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (EAS) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Typical/Maximum @ Vgs=10 V) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Crss) | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF27P06 is a P-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. It is designed for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key specifications include a drain-source voltage rating of -60V, continuous drain current of -17A at Tc=25°C, and maximum on-resistance of 70mOhm at Vgs=-10V and Id=-8.5A. The device features low gate charge (typical 33nC) and low reverse transfer capacitance (typical 120pF) for efficient switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 560mJ.
The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which is lead-free (Pb-Free) and RoHS compliant. It has an operating junction temperature range of -55°C to +175°C and a maximum power dissipation of 47W at Tc=25°C.
The drain-source voltage (Vdss) is -60V.
It is available in a TO-220-3 Full Pack (supplier device package TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to +175°C.
The device is marked as RoHS3 compliant and lead-free (Pb-Free), though this is unverified.
The gate charge (Qg) is 43 nC maximum at Vgs=10V, typical 33 nC.
Maximum Rds(on) is 70mOhm at Vgs=-10V, Id=-8.5A.