Mfr Part #:

FQPF27N25

N-Channel enhancement mode MOSFET rated for 250V drain-source voltage and 14A continuous current. Packaged in a TO-220-3 Full Pack with through-hole mounting.

✓ Total Stock: 1,908 pcs

FQPF27N25 Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,669 pcs On Request	1669 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	239 pcs On Request	239 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQPF27N25 Description

Short technical summary and product information.

The FQPF27N25 is an N-Channel enhancement mode power MOSFET from On Semiconductor, utilizing their proprietary planar stripe and DMOS technology. This MOSFET is designed to provide low on-state resistance and superior switching performance, making it suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.

Key electrical ratings include a drain-source voltage of 250V, continuous drain current of 14A at 25°C (8.9A at 100°C), and a pulsed drain current of 56A. The maximum on-resistance is 110 mOhm at Vgs=10V and Id=7A. The device features a low typical gate charge of 50 nC and low reverse transfer capacitance of 45 pF, which enhances switching efficiency.

The FQPF27N25 comes in a TO-220-3 Full Pack package with through-hole mounting, suitable for standard PCB assembly. The junction operating temperature range is -55°C to +150°C. The product is Pb-Free and RoHS compliant, with an MSL rating of 1 (unlimited).

FQPF27N25 Quick Information

Product Type: N-Channel MOSFET

Series: FQPF

Canonical Name: On Semiconductor FQPF27N25 N-Channel QFET MOSFET

Subcategory: Single

FQPF27N25 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free

FQPF27N25 Features

N-Channel QFET MOSFET rated 250V 14A.
Low on-resistance of 110 mOhm typical.
Low gate charge of 50 nC for efficient switching.
100% avalanche tested for ruggedness.
Pb-Free and RoHS compliant.

FQPF27N25 Applications

Switched mode power supplies (SMPS).
Active power factor correction (PFC) circuits.
Electronic lamp ballasts.
High-efficiency DC-DC converters.
Inverter and motor control circuits.

FQPF27N25 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (VDS) of the FQPF27N25?

250 V

What is the maximum continuous drain current (ID) at different temperatures?

14 A at Tc = 25°C, 8.9 A at Tc = 100°C

What is the typical gate charge (Qg) of the FQPF27N25?

50 nC typical, 65 nC maximum at Vgs = 10 V

What package is the FQPF27N25 available in?

TO-220-3 Full Pack (supplier device package: TO-220F-3)

What is the operating temperature range of the FQPF27N25?

-55°C to +150°C (junction temperature)

Is the FQPF27N25 RoHS compliant?

RoHS3 Compliant (unverified, datasheet indicates Pb-Free)

What is the maximum on-resistance (RDS(on)) of the FQPF27N25?

110 mOhm at Vgs = 10 V and Id = 7 A

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	14A (Tc)
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	110 mOhm
SVHC Present	Not Present
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V