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FQPF22N30 FQPF22N30 is an N-Channel MOSFET from ON Semiconductor. It features a 300V drain-source voltage, 12A continuous current, and low on-resistance of 160mOhm.
Mfr Part #:

FQPF22N30

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF22N30 is an N-Channel MOSFET from ON Semiconductor. It features a 300V drain-source voltage, 12A continuous current, and low on-resistance of 160mOhm.
Total Stock: 3,000 pcs

FQPF22N30 Available from 1 distributor

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FQPF22N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF22N30 Description

Short technical summary and product information.

The FQPF22N30 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring efficient power management. With a drain-to-source voltage (Vdss) of 300V and a continuous drain current (Id) of 12A at Tc=25°C, this MOSFET can handle moderate power levels in a compact through-hole package. The device features a maximum on-resistance (Rds(on)) of 160mOhm at Vgs=10V and Id=6A, ensuring low conduction losses. The gate threshold voltage (Vgs(th)) is 5V maximum, and the gate charge (Qg) is 60nC at Vgs=10V, enabling efficient gate drive. The power dissipation is rated at 56W at Tc=25°C, and the operating junction temperature range is -55°C to 150°C. The device is housed in a TO-220-3 Full Pack (TO-220F-3) package, which provides full encapsulation for improved thermal performance and isolation. It is mounted through-hole, making it suitable for traditional PCB assembly. The input capacitance (Ciss) is 2200pF at Vds=25V, indicating moderate switching speeds. This MOSFET is ideal for power supplies, DC-DC converters, and motor control circuits where high voltage and moderate current are required.

FQPF22N30 Quick Information

Product Type: MOSFET
Canonical Name: FQPF22N30 N-Channel MOSFET
Subcategory: Single MOSFET

FQPF22N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF22N30 Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Continuous drain current of 12A at 25°C case temperature.
  • Low on-resistance of 160mOhm maximum.
  • Through-hole mounting in TO-220F-3 package.
  • Operating junction temperature range -55°C to 150°C.

FQPF22N30 Applications

  • High-voltage power supply switching circuits.
  • DC-DC converter and inverter topologies.
  • Motor control and solenoid drivers.
  • Battery management and protection circuits.

FQPF22N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF22N30?

The drain-source voltage (Vdss) is 300V.

What is the continuous drain current of the FQPF22N30?

The continuous drain current is 12A at Tc=25°C.

What is the maximum on-resistance of the FQPF22N30?

The maximum on-resistance is 160mOhm at Vgs=10V, Id=6A.

What is the package type of the FQPF22N30?

The device is packaged in TO-220-3 Full Pack (TO-220F-3) with through-hole mounting.

What is the operating temperature range of the FQPF22N30?

The operating junction temperature range is -55°C to 150°C.

Is the FQPF22N30 RoHS compliant?

The component is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

What is the gate charge of the FQPF22N30?

The maximum gate charge is 60nC at Vgs=10V.

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