| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,516 pcs
|
51516 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF20N06L is an N-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It is designed for high efficiency power switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 60V, a continuous drain current of 15.7A at Tc, and a maximum drain-source on-resistance (Rds(on)) of 55mΩ at Vgs = 10V and Id = 7.85A. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at Id = 250µA. The device features a maximum gate charge (Qg) of 13nC at Vgs = 5V and an input capacitance (Ciss) of 630pF at Vds = 25V.
The MOSFET is housed in a TO220F through-hole package, suitable for PCB mounting. It can operate over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 30W at Tc.
The drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 15.7A at Tc.
The maximum drain-source on-resistance is 55mΩ at Vgs = 10V and Id = 7.85A.
The operating junction temperature range is -55°C to 175°C.
The FQPF20N06L is available in a TO220F through-hole package.
The maximum gate threshold voltage is 2.5V at Id = 250µA.
The maximum power dissipation is 30W at Tc.