| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF1N60T is a 600V N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It is designed using planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key electrical specifications include a drain-source voltage (Vdss) of 600V, continuous drain current of 0.9A at 25°C (0.57A at 100°C), and a maximum on-resistance of 11.5 Ohms at 10V gate drive. The device features a low typical gate charge of 5 nC and low input capacitance of 150 pF, enabling efficient high-frequency switching.
The FQPF1N60T is packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for isolated mounting. It is well suited for applications such as switch mode power supplies and other power conversion circuits requiring high voltage capability.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 0.9A at a case temperature of 25°C, and 0.57A at 100°C.
The FQPF1N60T is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance (Rds on) is 11.5 Ohms at a drain current of 450mA and gate-source voltage of 10V.
The gate threshold voltage (Vgs(th)) ranges from 3V minimum to 5V maximum at a drain current of 250µA.
The FQPF1N60T is listed as RoHS3 Compliant, but this data is unverified and should be confirmed with the manufacturer.