| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF1N50 is an N-Channel power MOSFET using Metal Oxide semiconductor technology. It is designed for high voltage applications with a maximum drain-source voltage of 500V and continuous drain current of 900mA. The device features a maximum on-state resistance of 9 Ohms at 450mA and 10V gate drive. Gate charge is 5.5nC at 10V, and input capacitance is 150pF at 25V. The maximum gate threshold voltage is 5V at 250µA. Power dissipation is 16W at case temperature. Operating junction temperature range is -55°C to 150°C. The device is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting. Suitable for switching and amplification applications in power supplies and motor control.
The FQPF1N50 is packaged in a TO-220-3 Full Pack (TO-220F-3).
The operating junction temperature range is -55°C to 150°C.
The database indicates RoHS3 compliant with low confidence; this information is unverified.
The maximum drain-source voltage is 500V.
The maximum continuous drain current is 900mA at case temperature.
The maximum on-resistance is 9 Ohm at 450mA drain current and 10V gate-source voltage.
The mounting type is through hole.