| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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375,000 pcs
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375000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The FQPF19N20C is an N-Channel enhancement mode power MOSFET from On Semiconductor, part of the QFET family. It is designed using planar stripe and DMOS technology to minimize on-state resistance and provide superior switching performance. The device is rated for a maximum drain-source voltage of 200V and a continuous drain current of 19A at 25°C case temperature. The maximum drain-source on-resistance is 170mOhm at Vgs = 10V and Id = 9.5A. The gate charge is typically 40.5nC, and the input capacitance is 1080pF typical.
This MOSFET is suitable for applications such as switched mode power supplies (SMPS), active power factor correction (PFC), and electronic lamp ballasts. It offers high avalanche energy capability with a single pulsed avalanche energy rating of 433mJ and repetitive avalanche energy of 13.9mJ. The device is delivered in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides isolation between the mounting surface and the die. The package is Pb-Free and RoHS compliant.
The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 43W at 25°C case temperature. The thermal resistance from junction to case is 2.89°C/W and from junction to ambient is 62.5°C/W. The recommended gate drive voltage is 10V, and the maximum gate-source voltage is ±30V. The device is 100% avalanche tested and supports peak diode recovery dv/dt up to 5.5V/ns.
The maximum drain-source voltage is 200V.
The maximum continuous drain current is 19A at 25°C case temperature.
The maximum drain-source on-resistance is 170mOhm at Vgs = 10V and Id = 9.5A.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
Yes, the device is RoHS3 compliant and Pb-Free per the datasheet.
The maximum gate threshold voltage is 4V at Id = 250µA.