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FQPF19N20 FQPF19N20 is a 200V N-Channel MOSFET from On Semiconductor. It features a continuous drain current of 11.8A and a maximum Rds(on) of 150mOhm at 10V gate drive.
Mfr Part #:

FQPF19N20

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF19N20 is a 200V N-Channel MOSFET from On Semiconductor. It features a continuous drain current of 11.8A and a maximum Rds(on) of 150mOhm at 10V gate drive.
✓ Total Stock: 2,000 pcs

FQPF19N20 Available from 1 distributor

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2,000 pcs
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FQPF19N20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF19N20 Description

Short technical summary and product information.

The FQPF19N20 is a 200V N-Channel MOSFET manufactured by On Semiconductor. It utilizes Metal Oxide (MOSFET) technology and is designed for high-voltage switching applications. The device is rated for a maximum drain-to-source voltage of 200V and a continuous drain current of 11.8A at case temperature (Tc). The maximum power dissipation is 50W at Tc. The gate threshold voltage is up to 5V at 250µA drain current, and the recommended gate drive voltage for achieving the specified on-resistance is 10V. The maximum on-resistance (Rds(on)) is 150mOhm at 5.9A drain current and 10V gate-source voltage. The device features a gate charge of 40nC at 10V and an input capacitance of 1600pF at 25V drain-source voltage. The junction temperature range is -55°C to 150°C. The MOSFET is packaged in a TO-220-3 Full Pack (TO-220F-3) case and is intended for through-hole mounting. This full-pack package provides electrical isolation, simplifying thermal management. The part is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited).

FQPF19N20 Quick Information

Product Type: MOSFET
Canonical Name: FQPF19N20 MOSFET N-Channel 200V 11.8A TO-220F-3
Subcategory: N-Channel MOSFET

FQPF19N20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF19N20 Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Maximum continuous drain current of 11.8A.
  • Low on-resistance of 150mOhm at 10V gate drive.
  • TO-220F-3 full-pack through-hole package.
  • RoHS3 compliant and REACH unaffected.

FQPF19N20 Applications

  • High-voltage switching power supplies.
  • DC-DC converters and inverters.
  • Motor control circuits.
  • Power management in industrial equipment.

FQPF19N20 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQPF19N20?

200V.

What package type does the FQPF19N20 use?

TO-220-3 Full Pack (TO-220F-3).

What is the operating junction temperature range?

-55°C to 150°C.

Is the FQPF19N20 RoHS compliant?

Yes, RoHS3 Compliant (unverified, low confidence).

What is the maximum continuous drain current?

11.8A at case temperature (Tc).

What is the maximum on-resistance?

150mOhm at 5.9A drain current and 10V gate-source voltage.

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