| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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787 pcs
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787 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF19N10 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 13.6A at case temperature (Tc). The device is designed for efficient power switching and regulation applications.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 100 mOhm at a gate drive voltage of 10V and a drain current of 6.8A. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250 µA drain current. The device has an input capacitance (Ciss) of 780 pF at 25V drain-source voltage and a total gate charge (Qg) of 25 nC at 10V gate-source voltage.
The FQPF19N10 is packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for PCB mounting. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 38W at case temperature. The device is suitable for various power management and switching applications.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 13.6A at case temperature (Tc).
The maximum drain-to-source on-resistance (Rds(on)) is 100 mOhm at a gate voltage of 10V and drain current of 6.8A.
It is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this information is unverified.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250 µA.