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FQPF18N50V2 The FQPF18N50V2 is a 500V N-Channel MOSFET from On Semiconductor, rated for 18A continuous drain current and featuring a low typical on-resistance of 0.265 ohms.
Mfr Part #:

FQPF18N50V2

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQPF18N50V2 is a 500V N-Channel MOSFET from On Semiconductor, rated for 18A continuous drain current and featuring a low typical on-resistance of 0.265 ohms.
✓ Total Stock: 5,000 pcs

FQPF18N50V2 Available from 1 distributor

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Components Technology Group, Inc. ✓
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5,000 pcs
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FQPF18N50V2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF18N50V2 Description

Short technical summary and product information.

The FQPF18N50V2 is a 500V N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using planar stripe DMOS technology. It is designed for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

 

Key electrical characteristics include a continuous drain current of 18A at 25°C case temperature, a maximum drain-source voltage of 500V, and a typical on-resistance of 0.265 ohms at 10V gate drive. The device features low gate charge (typical 42 nC) and low reverse transfer capacitance (typical 11 pF) for fast switching performance. It is 100% avalanche tested and offers improved dv/dt capability.

 

The MOSFET is housed in a TO-220F full pack through-hole package, providing isolation. It has an operating junction temperature range of -55°C to 150°C and a junction-to-case thermal resistance of 1.8°C/W.

FQPF18N50V2 Quick Information

Product Type: MOSFET
Canonical Name: FQPF18N50V2 500V N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQPF18N50V2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF18N50V2 Features

  • 500V drain-source voltage rating.
  • 18A continuous drain current at 25°C.
  • Low typical on-resistance of 0.265 ohms.
  • Low gate charge for fast switching.
  • 100% avalanche tested for ruggedness.

FQPF18N50V2 Applications

  • Ideal for switched mode power supplies.
  • Used in active power factor correction.
  • Suitable for electronic lamp ballasts.
  • Applicable in half bridge topologies.

FQPF18N50V2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF18N50V2?

The drain-source voltage (Vdss) is 500V.

What is the continuous drain current of the FQPF18N50V2?

The continuous drain current is 18A at Tc=25°C and 12.1A at Tc=100°C.

What is the on-resistance of the FQPF18N50V2?

The typical on-resistance is 0.265 ohms at Vgs=10V, with a maximum of 265 mOhm at 9A, 10V.

What package does the FQPF18N50V2 come in?

The FQPF18N50V2 is available in a TO-220-3 Full Pack (TO-220F) through-hole package.

What is the operating temperature range of the FQPF18N50V2?

The operating junction temperature range is -55°C to 150°C.

Is the FQPF18N50V2 RoHS compliant?

The RoHS status is listed as compliant, but this is unverified and should be confirmed with the manufacturer.

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