| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The FQPF18N20V2YDTU is a 200V N-Channel MOSFET from On Semiconductor. It utilizes planar stripe DMOS technology to achieve low on-resistance (140 mΩ maximum at VGS=10V, ID=9A) and fast switching performance. The device supports continuous drain current up to 18A at 25°C (11.9A at 100°C) and pulsed current up to 72A. Gate charge is typically 20 nC with a maximum of 26 nC at VGS=10V.
The MOSFET is avalanche rated with single pulse avalanche energy of 340 mJ and repetitive avalanche energy of 12.3 mJ. It offers improved dv/dt capability with a peak diode recovery dv/dt of 6.5 V/ns. The device is 100% avalanche tested.
The part is housed in a TO-220F-3 full pack package with formed leads for through-hole mounting. Power dissipation is 40W at case temperature 25°C with a derating factor of 0.32 W/°C. Operating junction temperature ranges from -55°C to 150°C. Thermal resistance junction-to-case is 3.1°C/W and junction-to-ambient is 62.5°C/W. Designed for low voltage applications such as automotive, DC/DC converters, and DC motor control.
200 V maximum.
TO-220-3 Full Pack with formed leads (TO-220F-3).
-55°C to 150°C junction temperature.
Listed as RoHS3 compliant, but unverified (low confidence).
140 mΩ maximum at VGS=10V, ID=9A.
Typical 20 nC, maximum 26 nC at VGS=10V.
Single pulsed avalanche energy 340 mJ, repetitive 12.3 mJ.