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FQPF17P06 FQPF17P06 is a P-Channel enhancement mode MOSFET with -60V drain-source voltage and -12A continuous drain current. It features low on-resistance (120 mOhm) and fast switching.
Mfr Part #:

FQPF17P06

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF17P06 is a P-Channel enhancement mode MOSFET with -60V drain-source voltage and -12A continuous drain current. It features low on-resistance (120 mOhm) and fast switching.
✓ Total Stock: 6,500 pcs

FQPF17P06 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,500 pcs
On Request
6500 pcs On Request 1 On Request On Request On Request On Request On Request
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FQPF17P06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF17P06 Description

Short technical summary and product information.

The FQPF17P06 is a P-Channel enhancement mode power MOSFET fabricated using Fairchild's planar stripe DMOS technology. This technology minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in avalanche and commutation modes.

 

Key electrical specifications include a drain-source voltage of -60V, continuous drain current of -12A at 25°C, and an on-resistance of 0.12Ω (max) at VGS = -10V. The device features low gate charge (typical 21 nC, max 27 nC) and low input capacitance (900 pF at VDS = -25V). It is avalanche rated for single pulse events up to 300 mJ and has a peak diode recovery dv/dt rating of -7.0 V/ns.

 

The FQPF17P06 is housed in a TO-220-3 Full Pack package (also designated TO-220F-3) with through-hole mounting. It operates over a junction temperature range of -55°C to 175°C, with thermal resistance junction-to-case of 3.85°C/W and junction-to-ambient of 62.5°C/W.

 

Typical applications include low voltage DC/DC converters, power management in portable and battery-operated products, and automotive systems.

FQPF17P06 Quick Information

Product Type: P-Channel MOSFET
Series: FQPF
Canonical Name: FQPF17P06 P-Channel MOSFET 60V 12A TO-220-3 Full Pack
Subcategory: Single MOSFET

FQPF17P06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF17P06 Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • Low on-resistance of 0.12 ohms at -10V.
  • Avalanche rated for 300 mJ single pulse.
  • Low gate charge of 21 nC typical.
  • RoHS3 compliant (unverified).

FQPF17P06 Applications

  • Power management in portable devices.
  • DC/DC converter circuits.
  • Automotive low voltage applications.
  • High efficiency switching regulators.

FQPF17P06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF17P06?

-60V (minimum).

What package is the FQPF17P06 available in?

TO-220-3 Full Pack (TO-220F-3) with through-hole mounting.

What is the operating temperature range of the FQPF17P06?

-55°C to 175°C (junction).

Is the FQPF17P06 RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the continuous drain current rating at 25°C?

-12A (maximum) at TC = 25°C.

How much is the typical gate charge?

Typical gate charge is 21 nC, maximum 27 nC at VGS = -10V.

What is the on-resistance of the FQPF17P06?

Typical 0.094Ω, maximum 0.120Ω at VGS = -10V, ID = -6.0A.

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