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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF17N40T is a 400V, 9.5A N-Channel power MOSFET designed and manufactured by On Semiconductor. It utilizes standard MOSFET (Metal Oxide) technology and is suitable for a variety of power switching applications.
The device features a maximum drain-source on-resistance of 270mOhm when driven with a 10V gate voltage and a drain current of 4.75A. The gate threshold voltage is 5V maximum at 250µA. It has a maximum gate charge of 60 nC at 10V, and an input capacitance of 2300 pF at 25V drain-source voltage. The maximum power dissipation is 56W at case temperature.
The MOSFET is offered in a through-hole TO-220-3 Full Pack package, also known as TO-220F-3. It can operate over a junction temperature range of -55°C to 150°C. The fully isolated package provides ease of mounting and thermal management.
With its 400V breakdown voltage and 9.5A continuous drain current capability, the FQPF17N40T is suitable for applications such as power supplies, inverters, and motor control circuits. The N-Channel enhancement mode design allows for straightforward gate drive requirements.
400V.
9.5A at case temperature.
270mOhm maximum at 4.75A drain current and 10V gate drive.
TO-220-3 Full Pack (TO-220F-3).
-55°C to 150°C junction temperature.
It is listed as RoHS3 compliant, but this is unverified.
5V maximum at 250µA drain current.