FQPF17N40T FQPF17N40T is a 400V, 9.5A N-Channel MOSFET from On Semiconductor. It features a maximum on-resistance of 270mOhm at 10V gate drive and is packaged in a TO-220F full pack.
Mfr Part #:

FQPF17N40T

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQPF17N40T is a 400V, 9.5A N-Channel MOSFET from On Semiconductor. It features a maximum on-resistance of 270mOhm at 10V gate drive and is packaged in a TO-220F full pack.
✓ Total Stock: 10,000 pcs

FQPF17N40T Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request

FQPF17N40T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF17N40T Description

Short technical summary and product information.

The FQPF17N40T is a 400V, 9.5A N-Channel power MOSFET designed and manufactured by On Semiconductor. It utilizes standard MOSFET (Metal Oxide) technology and is suitable for a variety of power switching applications.

 

The device features a maximum drain-source on-resistance of 270mOhm when driven with a 10V gate voltage and a drain current of 4.75A. The gate threshold voltage is 5V maximum at 250µA. It has a maximum gate charge of 60 nC at 10V, and an input capacitance of 2300 pF at 25V drain-source voltage. The maximum power dissipation is 56W at case temperature.

 

The MOSFET is offered in a through-hole TO-220-3 Full Pack package, also known as TO-220F-3. It can operate over a junction temperature range of -55°C to 150°C. The fully isolated package provides ease of mounting and thermal management.

 

With its 400V breakdown voltage and 9.5A continuous drain current capability, the FQPF17N40T is suitable for applications such as power supplies, inverters, and motor control circuits. The N-Channel enhancement mode design allows for straightforward gate drive requirements.

FQPF17N40T Quick Information

Product Type: MOSFET
Canonical Name: FQPF17N40T N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQPF17N40T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF17N40T Features

  • 400V drain-source voltage rating.
  • 9.5A continuous drain current.
  • 270mOhm maximum on-resistance at 10V.
  • Through-hole TO-220F package.
  • N-Channel enhancement mode MOSFET.

FQPF17N40T Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor drive and control.
  • Inverter and UPS systems.
  • General purpose power switching.

FQPF17N40T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQPF17N40T?

400V.

What is the continuous drain current rating?

9.5A at case temperature.

What is the on-resistance of the FQPF17N40T?

270mOhm maximum at 4.75A drain current and 10V gate drive.

What package is the FQPF17N40T available in?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQPF17N40T RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

Home
Account

Categories