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FQPF13N50CF N-Channel enhancement mode power MOSFET rated at 500V and 13A continuous drain current. Features low on-state resistance and high avalanche energy strength.
Mfr Part #:

FQPF13N50CF

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode power MOSFET rated at 500V and 13A continuous drain current. Features low on-state resistance and high avalanche energy strength.
✓ Total Stock: 10,172 pcs

FQPF13N50CF Available from 4 distributors

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FQPF13N50CF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF13N50CF Description

Short technical summary and product information.

The FQPF13N50CF is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for power conversion applications.

 

Key electrical ratings include a drain-source voltage of 500V, continuous drain current of 13A at 25°C (8A at 100°C), and a maximum drain-source on-state resistance of 540mΩ at VGS=10V and ID=6.5A. The device features a low typical gate charge of 43nC and low reverse transfer capacitance of 20pF, contributing to efficient switching. It is 100% avalanche tested, with a single pulsed avalanche energy rating of 530mJ.

 

The MOSFET is housed in a TO-220 Fullpack (TO-220F-3) through-hole package, providing isolation and ease of mounting. The operating junction temperature range is -55°C to +150°C. The device is Pb-Free and RoHS compliant.

FQPF13N50CF Quick Information

Product Type: MOSFET
Canonical Name: FQPF13N50CF N-Channel MOSFET, 500V, 13A, TO-220F-3
Subcategory: N-Channel MOSFET

FQPF13N50CF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQPF13N50CF Features

  • N-Channel MOSFET rated at 500V and 13A.
  • Low on-state resistance of 540mΩ maximum.
  • Low gate charge of 43nC typical.
  • 100% avalanche tested with 530mJ rating.
  • Pb-Free and RoHS compliant package.

FQPF13N50CF Applications

  • Ideal for switched mode power supplies.
  • Used in active power factor correction circuits.
  • Suitable for electronic lamp ballasts.
  • Designed for high-efficiency power conversion.

FQPF13N50CF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQPF13N50CF?

The maximum drain-source voltage (VDSS) is 500V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 13A at TC=25°C.

What is the package type of the FQPF13N50CF?

The device is available in a TO-220 Fullpack (TO-220F-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQPF13N50CF RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-Free.

What is the typical gate charge of this MOSFET?

The typical gate charge (Qg) is 43nC at VGS=10V.

What is the maximum on-state resistance?

The maximum drain-source on-state resistance is 540mΩ at VGS=10V and ID=6.5A.

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