| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,540 pcs
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1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF13N50C is an N-Channel enhancement mode power MOSFET fabricated using ON Semiconductor's proprietary planar stripe DMOS technology (QFET). This advanced process minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in avalanche and commutation modes.
Key electrical specifications include a drain-source voltage rating of 500V, continuous drain current of 13A at 25°C (8A at 100°C), and pulsed drain current of 52A. Maximum on-resistance is 480mOhm at Vgs=10V and Id=6.5A. Gate charge is typically 43nC (56nC max), and input capacitance is 2055pF max at Vds=25V. The device is 100% avalanche tested with a single pulse avalanche energy rating of 860mJ.
Packaged in the through-hole TO-220F full-pack (TO-220-3), the FQPF13N50C offers a junction-to-case thermal resistance of 2.58°C/W and a maximum power dissipation of 48W at 25°C. Operating junction temperature ranges from -55°C to 150°C. This MOSFET is well-suited for high efficiency switched-mode power supplies, active power factor correction, and half-bridge electronic lamp ballasts.
500V minimum.
TO-220-3 Full Pack (TO-220F-3), through-hole mounting.
-55°C to 150°C (junction temperature).
RoHS3 Compliant according to existing database records (unverified confidence).
13A (limited by maximum junction temperature).
480mOhm at Vgs=10V and Id=6.5A.
860mJ single pulse.