| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF12N60C is a 600V N-Channel enhancement mode power MOSFET manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed for high-efficiency power conversion applications.
Key electrical specifications include a maximum drain-source voltage of 600V, continuous drain current of 12A at 25°C case temperature, and a maximum on-resistance of 650mΩ at 10V gate drive. The device offers a typical gate charge of 48nC and input capacitance of 2290pF, enabling fast switching performance.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, providing isolation between the mounting tab and the die. It is rated for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 51W at 25°C case temperature. The device is RoHS compliant.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 12A at a case temperature of 25°C.
The maximum on-resistance is 650mΩ at a drain current of 6A and gate-source voltage of 10V.
It is available in a TO-220-3 Full Pack (TO-220F) through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is RoHS compliant.
The typical gate charge is 48nC at Vgs=10V.