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FQPF11N50CF N-Channel MOSFET with 500V drain-source voltage and 11A continuous drain current. Features low on-resistance of 550mOhm at 10V gate drive.
Mfr Part #:

FQPF11N50CF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source voltage and 11A continuous drain current. Features low on-resistance of 550mOhm at 10V gate drive.
✓ Total Stock: 112 pcs

FQPF11N50CF Available from 1 distributor

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112 pcs
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FQPF11N50CF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF11N50CF Description

Short technical summary and product information.

The FQPF11N50CF is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at case temperature (Tc). The device utilizes MOSFET (Metal Oxide) technology and offers a maximum on-resistance (Rds(on)) of 550mOhm at 5.5A and 10V gate drive.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 250µA, a maximum gate charge (Qg) of 55nC at 10V, and an input capacitance (Ciss) of 2055pF at 25V. The gate-source voltage rating is ±30V, and the recommended drive voltage for achieving minimum on-resistance is 10V.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) package with through-hole mounting. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 48W at case temperature. The device is suitable for power supplies, inverters, and other high-voltage switching circuits.

FQPF11N50CF Quick Information

Product Type: MOSFET
Canonical Name: FQPF11N50CF N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQPF11N50CF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF11N50CF Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 11A.
  • Low on-resistance of 550 milliohms typical.
  • Through-hole mounting in TO-220F package.
  • Operating temperature range -55°C to 150°C.

FQPF11N50CF Applications

  • Ideal for high-voltage power supply circuits.
  • Used in DC-DC converters and inverters.
  • Suitable for motor control applications.
  • Applicable in lighting ballasts and adapters.

FQPF11N50CF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF11N50CF?

The drain-source voltage (Vdss) is 500V.

What is the continuous drain current rating?

The continuous drain current is 11A at Tc.

What is the maximum on-resistance?

The maximum on-resistance is 550mOhm at 5.5A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

The gate threshold voltage is 4V at 250µA drain current.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FQPF11N50CF available in?

It is available in a TO-220-3 Full Pack (TO-220F) package for through-hole mounting.

Is the FQPF11N50CF RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified and low confidence.

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