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FQPF10N60C N-Channel MOSFET with 600V drain-source voltage and 9.5A continuous drain current. Packaged in TO-220F-3 through-hole.
Mfr Part #:

FQPF10N60C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 9.5A continuous drain current. Packaged in TO-220F-3 through-hole.
✓ Total Stock: 2,421 pcs

FQPF10N60C Available from 3 distributors

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Xingangxin ✓
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1,651 pcs
On Request
1651 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
426 pcs
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426 pcs On Request 1 On Request On Request On Request On Request On Request
Husky International Electronic ✓
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344 pcs
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FQPF10N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF10N60C Description

Short technical summary and product information.

This is an N-Channel MOSFET from ON Semiconductor, part number FQPF10N60C. It features a drain-source voltage rating of 600V and a continuous drain current of 9.5A at case temperature. The device uses MOSFET (Metal Oxide) technology.

 

Key electrical characteristics include a maximum on-resistance of 730mOhm at 4.75A and 10V gate drive, input capacitance of 2040pF at 25V, and total gate charge of 57nC at 10V. The threshold voltage is 4V at 250µA. Maximum gate-source voltage is ±30V.

 

The device is designed for through-hole mounting in a TO-220-3 Full Pack package (TO-220F-3). It can operate over a junction temperature range of -55°C to 150°C. Power dissipation is 50W at case temperature.

 

This MOSFET is suitable for switching and power conversion applications requiring high voltage capability. The TO-220F full pack provides isolation for heat sinking.

FQPF10N60C Quick Information

Product Type: MOSFET
Canonical Name: FQPF10N60C
Subcategory: N-Channel MOSFET

FQPF10N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF10N60C Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 9.5A.
  • Low on-resistance of 730mOhm typical.
  • Through-hole TO-220F-3 package.
  • Wide operating temperature range -55°C to 150°C.

FQPF10N60C Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converters.
  • Ideal for motor drive applications.
  • Applicable in inverter designs.

FQPF10N60C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF10N60C?

600V.

What is the continuous drain current of this MOSFET?

9.5A at case temperature.

What package type does the FQPF10N60C use?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQPF10N60C RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

4V maximum at 250µA.

What is the maximum power dissipation?

50W at case temperature.

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