SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fairchild Semiconductor FQPF10N20C is an N-Channel enhancement mode power MOSFET designed using proprietary planar stripe and DMOS technology. This advanced technology is tailored to reduce on-state resistance, providing superior switching performance and high avalanche energy strength.
Key electrical specifications include a breakdown voltage of 200V and a continuous drain current rating of 9.5A. The maximum on-state resistance (RDS(on)) is 360mΩ at 10V, with a threshold voltage of 4V. Input capacitance is rated at 510pF.
This MOSFET features a rise time of 92ns and a fall time of 72ns. It has a maximum power dissipation of 38W and operates within a temperature range of -55°C to 150°C. The component is housed in a TO-220-3 package and is designed for through-hole mounting.
Applications for this MOSFET include power switching and general-purpose amplification where its robust design and electrical characteristics are beneficial.
| Qty | Low | High |
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| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 200V.
The maximum continuous drain current is 9.5A.
The maximum on-resistance is 360mΩ at 10V.
The gate threshold voltage is 4V.
The package type is TO-220-3.
It is designed for through-hole mounting.
The maximum operating temperature is 150°C.
