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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF10N20C is an N-Channel enhancement mode MOSFET manufactured by On Semiconductor. It features a drain-source breakdown voltage of 200V and a maximum continuous drain current of 9.5A at a case temperature of 25°C. The device has a maximum on-resistance of 360 mΩ at a gate drive of 10V and a drain current of 4.75A.
This MOSFET offers a maximum gate charge of 26 nC at 10V and an input capacitance of 510 pF at 25V drain-source voltage, making it suitable for switching applications. The maximum gate threshold voltage is 4V at a drain current of 250 µA, and the gate-source voltage rating is ±30V.
The FQPF10N20C is designed for through-hole mounting and comes in a TO-220-3 Full Pack package, also known as TO-220F-3. It can dissipate up to 38W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.
The drain-source breakdown voltage is 200V.
The maximum continuous drain current is 9.5A at a case temperature of 25°C.
The maximum on-resistance is 360 mΩ at a gate-source voltage of 10V and a drain current of 4.75A.
It comes in a TO-220-3 Full Pack (TO-220F-3) package for through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, though this is unverified.