| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,236 pcs
|
1236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
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The FQP9P25 is a P-Channel MOSFET from ON Semiconductor, utilizing MOSFET (Metal Oxide) technology. It features a drain-source voltage rating of 250V and a continuous drain current of 9.4A. The device offers a maximum on-resistance of 620mOhm at 4.7A and 10V gate drive. Gate charge is 38nC at 10V, and input capacitance is 1180pF at 25V. The threshold voltage is 5V at 250µA, with a maximum gate-source voltage of ±30V. Power dissipation is rated at 120W. The operating junction temperature range is -55°C to 150°C.
With its 250V breakdown voltage and 9.4A current capability, this MOSFET is suitable for medium-power switching circuits. The low gate charge and input capacitance enable efficient switching at moderate frequencies. The through-hole TO-220-3 package allows for easy mounting on PCBs or heatsinks. The device is listed as RoHS3 compliant, with MSL 1 and REACH unaffected.
250V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant.
38 nC at 10V.
620 mOhm maximum at 4.7A and 10V.
9.4A.