| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQP9N90C is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high-voltage switching applications. It has a drain-source voltage rating of 900V and a continuous drain current of 8A at case temperature. The device features a low on-resistance of 1.4Ω maximum at Vgs=10V and Id=4A, which helps minimize conduction losses.
Key electrical characteristics include a maximum gate charge of 58nC at 10V, input capacitance of 2730pF at Vds=25V, and a gate threshold voltage of 5V maximum. The device can dissipate up to 205W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The FQP9N90C is supplied in the industry-standard TO-220-3 through-hole package, which facilitates easy mounting on heatsinks. This package is suitable for various power conversion and switching circuits where high-voltage capability is required.
900V.
8A at case temperature.
1.4Ω maximum at 4A, 10V.
58nC maximum at 10V.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package.
The component is listed as RoHS3 compliant, but this information is unverified.